Infineon IPB033N10N5LF: High-Performance 100V OptiMOS 5 Power MOSFET

In the realm of power electronics, efficiency, power density, and reliability are paramount. The Infineon IPB033N10N5LF stands as a premier solution, embodying the advanced technological innovations of the OptiMOS™ 5 100V power MOSFET family. This device is engineered to deliver exceptional efficiency and ruggedness in a wide array of demanding applications, from industrial motor drives and solar inverters to robust DC-DC converters and power supplies.

A key metric for any power MOSFET is its on-state resistance, RDS(on). The IPB033N10N5LF sets a high standard with a maximum RDS(on) of just 3.3 mΩ at 10 V. This remarkably low resistance is instrumental in minimizing conduction losses, which directly translates to higher system efficiency, reduced heat generation, and the potential for smaller heatsinks. This allows designers to achieve more compact and cost-effective designs without compromising performance.

Beyond its static performance, the device excels in switching characteristics. The OptiMOS 5 technology ensures ultra-low switching losses, enabling systems to operate at higher frequencies. This capability is crucial for increasing the power density of modern applications, allowing for the use of smaller passive components like inductors and capacitors. The combination of low conduction and switching losses makes this MOSFET an ideal choice for high-frequency switch-mode power supplies (SMPS) and synchronous rectification stages.

The IPB033N10N5LF is offered in the space-saving SuperSO8 package (PG-TDSON-8), which provides an excellent balance between compact size and thermal performance. Its low package inductance is beneficial for managing voltage spikes during fast switching transitions, further enhancing overall system reliability. Furthermore, the device is designed with a high avalanche ruggedness, ensuring robust operation in harsh environments and under extreme stress conditions, a critical factor for industrial and automotive applications.

ICGOOFind: The Infineon IPB033N10N5LF is a top-tier power MOSFET that delivers a superior blend of ultra-low RDS(on), fast switching speed, and excellent thermal performance. It is a pivotal component for engineers aiming to push the boundaries of efficiency and power density in next-generation power conversion systems.

Keywords: Power MOSFET, High Efficiency, Low RDS(on), OptiMOS 5, Power Density.