Analysis of the Infineon IPT60R035CFD7 600V CoolMOS™ CFD7 Power MOSFET

The relentless pursuit of higher efficiency, power density, and reliability in power electronics drives continuous innovation in semiconductor technology. Among the key enablers are advanced power MOSFETs, such as the Infineon IPT60R035CFD7, a 600V member of the groundbreaking CoolMOS™ CFD7 family. This analysis delves into the architecture, key features, and performance advantages of this device, engineered specifically for hard- and soft-switching topologies.

At the core of the CFD7 series is the superjunction (SJ) technology, which Infineon has refined over generations. The CFD7 represents a significant leap, optimized for both performance and ease of use. The IPT60R035CFD7, with its ultra-low typical on-state resistance (R DS(on)) of just 35 mΩ, exemplifies this progress. This low resistance directly translates to reduced conduction losses, a primary source of heat generation in switching power supplies, motor drives, and inverters for renewable energy systems.

Beyond low R DS(on), the CFD7 technology introduces a crucial innovation: an integrated fast body diode. Traditional SJ MOSFETs often suffered from poor reverse recovery characteristics of their intrinsic body diode, leading to high switching losses and electromagnetic interference (EMI) in bridge circuits. The CFD7 series addresses this head-on. The IPT60R035CFD7 features an intrinsic diode with optimized reverse recovery behavior (Q rr). This results in reduced switching losses and softer switching, which minimizes voltage overshoot and stress on the device, thereby enhancing system reliability and simplifying snubber circuit design.

Another standout feature is its exceptional switching performance. The device boasts low gate charge (Q G) and low output capacitance (C OSS), particularly its reduced C OSS(er) (effective output capacitance related to switching energy). This combination ensures rapid turn-on and turn-off transitions, further minimizing switching losses. This makes it an ideal candidate for high-frequency operations, allowing designers to shrink the size of magnetic components and ultimately increase the overall power density of the end application.

The device is also notable for its high robustness and durability. It offers an expanded avalanche ruggedness and is qualified for repetitive avalanche events, providing an additional safety margin in demanding environments where voltage spikes are common.

ICGOOODFIND: The Infineon IPT60R035CFD7 CoolMOS™ CFD7 is a pinnacle of power MOSFET design, masterfully balancing ultra-low conduction losses, superior switching performance, and unparalleled body diode robustness. It is a transformative component that empowers designers to push the boundaries of efficiency and power density in next-generation SMPS, PFC stages, and solar inverters.

Keywords: Superjunction (SJ) Technology, Low R DS(on), Fast Body Diode, High Switching Frequency, Power Density.