Infineon IPB180P04P4L02ATMA1 OptiMOS 5 Power MOSFET for High-Efficiency Power Conversion
In the relentless pursuit of higher efficiency and power density in modern electronics, the choice of switching components is paramount. The Infineon IPB180P04P4L02ATMA1, a member of the advanced OptiMOS™ 5 40 V power MOSFET family, stands out as a premier solution engineered to meet these demanding challenges. This device is specifically designed to minimize power losses and maximize performance in a wide array of power conversion applications.
A key metric for any power MOSFET is its on-state resistance, or R DS(on). The IPB180P04P4L02ATMA1 boasts an exceptionally low R DS(on) of just 1.8 mΩ at 10 V. This ultra-low resistance is the cornerstone of its high-efficiency performance, as it directly translates to reduced conduction losses. When a MOSFET is on, less energy is wasted as heat across its drain-source junction, leading to cooler operation and significantly higher overall system efficiency. This is particularly critical in high-current applications such as server and telecom power supplies, where every percentage point of efficiency gain is vital for reducing operational costs and cooling requirements.
Beyond its stellar DC performance, the device is optimized for switching. The OptiMOS 5 technology ensures an excellent figure-of-merit (FoS), balancing low R DS(on) with minimal gate and output charge (Q G and Q oss). This superior switching characteristic allows for faster turn-on and turn-off times, which reduces switching losses, especially at higher frequencies. Operating at a higher frequency enables designers to use smaller passive components like inductors and capacitors, thereby increasing the power density of the final design. This makes the IPB180P04P4L02ATMA1 an ideal candidate for modern SMPS (Switch-Mode Power Supplies), OR-ing FETs, and motor drive controllers.
Housed in a robust PQFN 5.0x6.0 mm (SuperSO8) package, this MOSFET offers an excellent thermal footprint. The package features an exposed top and bottom, facilitating superior dual-sided cooling. This enhances heat dissipation away from the silicon die, allowing the component to handle high power levels without derating, thus improving reliability and longevity in space-constrained environments.
Furthermore, the device offers enhanced ruggedness and a body diode with high softness, contributing to improved reliability in demanding operating conditions, including those with high inductive loads.
ICGOOODFIND: The Infineon IPB180P04P4L02ATMA1 is a top-tier power MOSFET that sets a high benchmark for efficiency and thermal performance. Its ultra-low 1.8 mΩ R DS(on), superior switching characteristics, and advanced packaging make it an indispensable component for designers aiming to push the boundaries of efficiency and power density in next-generation power conversion systems.
Keywords: OptiMOS 5, Low RDS(on), High-Efficiency Power Conversion, PQFN Package, Switching Performance.
