High-Performance 650V IMW65R030M1H CoolMOS™ Power MOSFET from Infineon

Infineon Technologies continues to push the boundaries of power semiconductor performance with its IMW65R030M1H, a 650V CoolMOS™ Power MOSFET engineered for exceptional efficiency and reliability in high-demand applications. This device is a standout in the industry, leveraging advanced superjunction technology to achieve an ultra-low on-state resistance (RDS(on)) of just 30 mΩ maximum. This remarkably low resistance directly translates to minimized conduction losses, enabling higher system efficiency and reduced heat generation.

The IMW65R030M1H is specifically designed to excel in challenging switching environments. It features outstanding switching characteristics and a robust body diode, which ensure reliable operation in circuits prone to hard commutation. This makes it an ideal component for a wide array of power conversion systems, including:

Server & Telecommunication Power Supplies (SMPS)

Industrial Motor Drives and Controls

Photovoltaic Inverters and Energy Storage Systems

Charging Infrastructure for Electric Vehicles (EV)

High-Efficiency Lighting Solutions

A key benefit for designers is the device’s enhanced ease of use. The reduced gate charge (Qg) and lower output capacitance (Coss) significantly simplify gate driving circuit design and minimize switching losses, even at high frequencies. Furthermore, its high avalanche ruggedness and strong tolerance to repetitive overcurrent conditions provide an additional margin of safety and durability, which is critical for industrial and automotive environments.

Packaged in the industry-standard TO-247, the IMW65R030M1H offers excellent thermal performance, allowing for effective heat dissipation and enabling higher power density designs. By combining low losses with superior switching performance, this MOSFET allows engineers to create systems that are not only more compact and lighter but also cooler and more energy-efficient.

ICGOOODFIND: The Infineon IMW65R030M1H CoolMOS™ sets a high bar for 650V power MOSFETs, delivering a potent combination of ultra-low RDS(on), fast switching speed, and proven robustness. It is a top-tier choice for designers aiming to maximize efficiency and power density in next-generation power electronics.

Keywords: CoolMOS™, Ultra-Low RDS(on), High-Efficiency, Fast Switching, Avalanche Rugged