Infineon FP25R12W2T4_B11: A High-Performance 25A IGBT Module for Advanced Power Conversion

Release date:2025-10-29 Number of clicks:144

Infineon FP25R12W2T4_B11: A High-Performance 25A IGBT Module for Advanced Power Conversion

The relentless pursuit of higher efficiency, greater power density, and enhanced reliability in power electronics drives continuous innovation in semiconductor technology. At the forefront of this evolution is the Infineon FP25R12W2T4_B11, a robust 25A IGBT module engineered to meet the demanding requirements of modern power conversion systems. This module exemplifies a perfect synergy of cutting-edge trench gate field-stop IGBT technology and advanced antiparallel diode, setting a new benchmark for performance in its class.

Designed for a rated collector current of 25A and a collector-emitter voltage of 1200V, this module is an ideal solution for a wide array of industrial applications. Its primary use cases include high-efficiency motor drives for industrial automation and HVAC systems, renewable energy inverters for solar and wind power conversion, and high-frequency switching power supplies. The module's construction in a transfer-mold package offers superior isolation and reliability, which is critical for operation in harsh industrial environments.

The core of its superior performance lies in its advanced Trenchstop™ IGBT7 technology. This latest generation chip technology significantly reduces both saturation voltage (Vce(sat)) and switching losses, a traditionally difficult trade-off to manage. The result is a remarkable improvement in overall power conversion efficiency, allowing systems to run cooler and at higher switching frequencies. This enables designers to create more compact systems by reducing the size of heatsinks and passive components. Furthermore, the module features a low-indunce design for its internal busbar structure, which minimizes voltage overshoots during switching and enhances system reliability by reducing electromagnetic interference (EMI).

The co-packaged EmCon7 diode is optimized for ultra-soft reverse recovery characteristics. This is crucial for minimizing switching losses and voltage spikes in the inverter legs, further contributing to the module's high efficiency and robust operation. The module's design ensures a very low thermal resistance from junction to case (Rth(j-c)), facilitating excellent heat dissipation and allowing for higher output power or longer operational life.

In summary, the Infineon FP25R12W2T4_B11 is not just a component but a comprehensive solution for engineers aiming to push the boundaries of power density and efficiency. Its state-of-the-art technology addresses the key challenges of modern power conversion, making it a cornerstone for the next generation of industrial drives and energy systems.

ICGOOFIND: The Infineon FP25R12W2T4_B11 is a high-performance power module that leverages IGBT7 and EmCon7 diode technology to deliver an exceptional balance of low losses and high reliability, making it a top-tier choice for advanced, high-density power conversion applications.

Keywords: IGBT Module, Power Conversion, Motor Drives, Trenchstop Technology, High Efficiency

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